Jenith
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After facing performance issues with its HBM3E memory chips, Samsung is back on track. Just months after starting to supply sixth-generation high-bandwidth memory (HBM4) chips to AI giants like AMD and Nvidia, the South Korean firm has already started shipping samples of its seventh-generation high-bandwidth memory (HBM4E) chips to major customers.
The company's HBM4E chips feature a 12-layer structure that delivers 20% faster performance and 16% better power efficiency than its HBM4 chips. Samsung claims the chips offer a per-pin speed of 14Gbps, which can be increased to as much as 16Gbps. Their total memory bandwidth is rated at 3.6TB/s.
The new memory chips use Samsung's sixth-generation 10nm-class DRAM process (1c) and Samsung Foundry's 4nm logic base die. Thanks to design and process improvements, Samsung says it has increased manufacturing yields. Thermal resistance has also been improved by more than 14%, which enhances heat dissipation and reliability.
https://www.imeisource.com/wp-content/uploads/2026/05/Samsung-HBM4E-Memory-Chip.jpg
HBM4E chips from Samsung – Source: Samsung
Samsung plans to offer HBM4E chips with a capacity of 48GB in a 12-layer configuration, which is 30% higher than HBM4. Later, the company plans to expand its HBM4E lineup with 32GB (8-layer) and 64GB (16-layer) variants.
The company also revealed that customer feedback on its HBM4 chips has been overwhelmingly positive, and it plans to ensure a stable supply of memory chips for the rapidly growing AI market.
Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics, said, “Following the successful mass production of HBM4, Samsung has once again demonstrated its distinct technological edge with HBM4E. Through our advanced manufacturing capabilities and preemptive infrastructure investments, we will continue to drive the growth of the global AI memory market.“
The company's HBM4E chips feature a 12-layer structure that delivers 20% faster performance and 16% better power efficiency than its HBM4 chips. Samsung claims the chips offer a per-pin speed of 14Gbps, which can be increased to as much as 16Gbps. Their total memory bandwidth is rated at 3.6TB/s.
The new memory chips use Samsung's sixth-generation 10nm-class DRAM process (1c) and Samsung Foundry's 4nm logic base die. Thanks to design and process improvements, Samsung says it has increased manufacturing yields. Thermal resistance has also been improved by more than 14%, which enhances heat dissipation and reliability.
https://www.imeisource.com/wp-content/uploads/2026/05/Samsung-HBM4E-Memory-Chip.jpg
HBM4E chips from Samsung – Source: Samsung
Samsung plans to offer HBM4E chips with a capacity of 48GB in a 12-layer configuration, which is 30% higher than HBM4. Later, the company plans to expand its HBM4E lineup with 32GB (8-layer) and 64GB (16-layer) variants.
The company also revealed that customer feedback on its HBM4 chips has been overwhelmingly positive, and it plans to ensure a stable supply of memory chips for the rapidly growing AI market.
Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics, said, “Following the successful mass production of HBM4, Samsung has once again demonstrated its distinct technological edge with HBM4E. Through our advanced manufacturing capabilities and preemptive infrastructure investments, we will continue to drive the growth of the global AI memory market.“